| 摘要 |
PURPOSE:To reduce the variation of a bias of a substrate for a semiconductor device for forming a semiconductor integrated circuit on a semiconductor chip and applying bias voltage thereto in operation by providing a capacitance element on the same chip to charge the element when the circuit is operated and to discharge the element when the circuit operation is finished. CONSTITUTION:An integrated circuit 11 is provided on a semiconductor integrated circuit chip 10, a clock becoming a bias voltage for a substrate is inputted from external circuit through a terminal 12 thereto to operate the circuit 11. The substrate current is varied by the operation of the circuit 11, the bias voltage is decreased when the circuit operation is started, and is increased when the circuit operation is ended. Therefore, a capacitance element 13 is formed onto the chip 10 in order to absorb the variation of the bias voltage, and the charging and discharging circuit 14 having an inverter I, delay circuits DL-1 and DL-2, and transistors TR-1 and TR-2 is provided between the one end of the element 13 and the terminal 12, and the other end of the element 13 is connected to the circuit 11. In this manner, the variation of the substrate current is suppressed to meet the operation of the circuit so as to reduce the error operation. |
