| 摘要 |
PURPOSE:To switch ON or OFF by temperature and DC power source in a heat- sensitive switching device by forming lateral and longitudinal pnpn thyristor in the same semiconductor substrate, connecting a load through an external power source and a diode to the lateral thyristor and controlling it with the longitudinal thyristor. CONSTITUTION:A p-type emitter region 4, a p-type base region 6 and an n-type emitter region 8 disposed therein are formed in a common n-type Si substrate 1 becoming the n-type base region 3 of the lateral thyristor A to form a lateral thyristor A. Then, a layer 2 becoming the n-type emitter region of longitudinal thyristor B is diffused and formed on the back surface of the substrate 1, and a p-type base region 6 is formed while contacting the thyristor A and n-type emitter region 8 and n-type base region 12, and a p-type emitter region 14 are formed in the region 3 disposed thereon to form a longitudinal thyristor B. In this manner, a load is connected through the external power source 23 and a diode 24 to the thyristor A, and the part of the circuit is connected to the region 14. |
