| 摘要 |
PURPOSE:To enable photoetching with accurate positioning, by using exposure region pattern constants in a preceding photoetching process and using other exposure region pattern constants in the succeeding photoetching process. CONSTITUTION:Pattern constants lx1, ly1 are set for a preceding mask pattern 3 of five rows and five columns. To use other pattern constants lx2, ly2 for succeeding etching, the pattern constants of a succeeding mask pattern 4 are multiplied by compensation ratios lx2/lx1, ly2/ly1. Such compensation ratios are previously set for a wafer as to each manufacturing process. If the change in a photoetched surface from the time before photoetching to the time after it is measured and calculation is formed, accurate compensation ratios can be set. Since a pair of masks are thus used, photoetching with high positioning accuracy can be effected. As a result, a position can be set as prescribed and the properties of a device and its yield are improved. |
