| 摘要 |
PURPOSE:To raise thermal conductivity of sintered silicon nitride and to contrive to improve thermal shock resistance, by dispersing BeO into grain boundary of silicon nitride crystal. CONSTITUTION:A Be-containing oxide (e.g., BeO, 3BeO.Al2O3 6SiO2, BeO.Al2O3 or 2BeO.SiO2) is used as a sintering auxiliary. The sintering auxiliary is mixed with silicon nitride. Then, the mixture is molded, sintered and BeO is dispersed into grain boundary of silicon nitride crystal. Consequently, thermal conductivity and heat shock resistance of sintered silicon nitride are improved. |
