| 摘要 |
PURPOSE:To enable an epitaxial growth device to be used safely and effectively by a method wherein an inner reaction tube obtained by coating the inside face of a qualtz reaction tube with Si is inserted in a qualtz reaction tube, a qualtz boat and substrates are arranged in it and hydrogen and inert gas are poured into the gap between the qualtz reaction tube and the inner tube. CONSTITUTION:An inner reaction tube 3 obtained by coating the inside face of a qualtz reaction tube with Si is inserted in a qualtz reaction tube 2, a qualtz boat and substrates are arranged in it and is constructed to be able to pour hydrogen and inert gas into the gap between the reaction tube 3 and the reaction tube 2. The inside of the reaction tube 3 is ventilated with inert gas, and the reaction tube 2 is heated from the outer circumference by a heater 1. By this way, as the outlet of the reaction tube 3 is closed to prevent an inflow of air from the outside and Si does not stick to the reaction tube 2, the generation of contamination and crack on the reaction tube 2 is avoided, and the device can be used safely and effectively. |
