MANUFACTURE OF GALLIUM ARSENIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve initial characteristic by washing GaAs with water into which N2 gas is being injected. CONSTITUTION:When a GaAs device is washed with deionized water on oxidized region 6 is formed on a GaAs active layer 2. A depletion layer is widened and an active layer is made to be narrower in this region 6 in case of a FET and initial characteristic is deteriorated. Such deterioration is remarkable when a partial metal electrode such as a gate electrode exists. When dissolved O2 in water is small, progress of oxidation becomes excessively slow. Therefore with N2 gas injected into water dissolved O2 gas is eliminated, and a GaAs device with extremely excellent initial characteristic is obtained.