| 摘要 |
PURPOSE:To improve dielectric strength by a method wherein on a substrate which has a buried layer an epitaxial layer which has reverse conducting mechanism is laminated and in this layer a base layer which has same conducting mechanism and of which an end is osculated with a dielectric insulation layer is formed and crossing of a base collector junction and an emitter base junction is eliminated. CONSTITUTION:An n<->-epitaxial layer 5 is formed on a p-type substrate 1 which has an n<+>-buried layer, and on an SiO2 film 8 a resist mask 10 is applied, and p-layer 4 is formed by B ion implantation. Next thereto two layered mask of Si3N4 14 and SiO2 is formed, and a concave region 15 is formed by etching away the n<->-layer 5. Next thereto by the concave region 15 filled with SiO2 utilizing high pressure oxidization method, a dielectric isolation layer 2 is formed. Utilizing a conventional method hereafter, after the Si3N4 14 film is removed and the SiO2 film 8 is selectively perfolated for an opening, a resist mask 10' is applied and an n<+>-type emitter 3 and collector 16 are formed by P ion implantation. Next thereto the mask 10' is removed and an electrode is formed. By this constitution a base collector junction 11 and an emitter base junction have not crossing point, and deterioration of dielectric strength or short circuiting can not occur. |
