| 摘要 |
PURPOSE:To avoid deterioration of a pn-junction during heat treatment by a method wherein when an Si3N4 film is applied on an Si substrate and it is perforated to form an electrode opening and an Al lead wire which is connected with the substrate and extends over the film is fabricated the film under the lead wire is formed to contain excess quantity of Si. CONSTITUTION:On a p-type Si substrate 1 an n-type region 3 being formed by diffusion a pn-junction is fabricated, and an insulation film 2 is formed to cover them, and it is perfolated, and an Al electrode lead wire 4 which is connected with a region 3 is fixed. Thus a semiconductor device is obtained by utilizing an Si3N4 film which has excess quantity of Si as an insulation film. By this method during heat treatment by which the lead wire 4 is fixed at the region 3, Si which is absorbed by Al of the lead wire 4 is supplied by excess quantity of Si in the film 2, and quantity to be supplied by the substrate 1 becomes very small, thus the former fabricated pn-junction can not be deteriorated. |
