| 摘要 |
PURPOSE:To set in positions with high accuracy and high speed by a method wherein a protruded region which has a flash that is not so easily fragile is provided and it is utilized as a setting reference mark. CONSTITUTION:On a garnet substrate alumina and Ti layers are laminated by evaporation and a setting reference mark 2 is formed through application of a resist mask. Utilizing this resist mask a Ti mark is constructed by means of ion etching. Next thereto when the resist mask is removed a flash 3 of Ti which has a hight H is formed on the setting reference mark 2. Next thereto an electron beam resist film is applied and the region including the setting reference mark is swept by an electron beam, and the relative position between the mark and the electron beam is detected, and setting adjustment to an existing pattern is performed. With this kind of mark high speed setting adjustment can be performed and high accuracy can be attained because of its small fragility. A flash of hard materials W, Si, Si3N4 etc. other than Ti can be available. |
