SEMICONDUCTOR LASER AND PRODUCTION THEREOF

摘要

PURPOSE:To facilitate the controlling of the crystal layer with a higher effect of confining light into an active layer by forming a projection on stepped surface of a substrate in such a manner as to be lower than the steps thereon located as a base and a bend small in the curvature on the active layer provided on the substrate. CONSTITUTION:A cascaded step T is formed on the n-type GaAs substrate 9 while two striped masks 10 are provided near the step T. The surface of the substrate 9 is etched to form two bridges C and D as the projection using the mask 10 for masking. An n-type Ga1-xAlxAs layer 11, a dope-free Ga1-yAlyAs layer 12, a p-type Ga1-xAlxAs layer 13 and a p-type GaAs layer 14 continuously grow on the substrate 9. At this point, the layer 11 is made thinner on both sides of the step T enough to control the oscillation so that light leaks to the substrate 9 through the layer 12. The layer 12 grows thick enough to confine the light while a bend is formed from the step T on the layer 12. An insulator film 15, a p side electrode metal film 16 and an n side electrode metal film 17 are formed sequentially on the surface of the crystal.