| 摘要 |
PURPOSE:To form uniform epitaxial layers on plural semiconductor substrates at the same time using a minimum necessary quantity of solution by a method wherein a container for liquid phase epitaxial growth holding semiconductor substrates horizontally, and a container to pour in the solution through a small hole are prepared. CONSTITUTION:A liquid phase epitaxial growth device is constituted by combining semicylindrical constituents 1a, 1b, and plural semiconductor substrates 7 are supported at 8 holizontally. A solutiol is poured into the device from an upper solution tank 4 through a small hole 3, and is conducted to the substrates 7 through a small hole 2. By this way, uniform epitaxial layers can be formed on the plural substrates 7 at one process using a minimum necessary quantity of solution. |
