METHOD AND APPARATUS FOR GASEOUS PHASE GROWTH

摘要

PURPOSE:To eliminate the unevenness of the thickness and quality of film due to the concentration gradient of reactant gas in the manufacture of a semiconductor device by a method in which a reactant gas is supplied from the upper part of a reactor and sucked up from the lower part of the reactor in making a horizontal gaseous phase growth of crystal on the surface of a wafer. CONSTITUTION:A large number of the wafers 11 are arranged on a susceptor at the bottom of the reactor 9 and a reactant gas whose pressure is kept at a given pressure below one atm is sent to the reactor 9 for making a horizontal gaseous phase growth of crystal from the reactant gas on the surface of the wafers 11. The reactant gas is introduced from the hole 13 of the reactant gas distributing means 8 at the upper part of the reactor 9 into the reactor 9 and then sucked up through the hole 14 of the reactant gas suction path-forming means 17 at the lower part of the reactor 9.