发明名称 ION BEAM DEPOSITION EQUIPMENT
摘要 PURPOSE:To effect efficient formation of the high purity coating layer conventionally considered difficult to conduct by a method wherein a selector to deflect only the desirable particles and deposit them on a substrate being deposited is installed between a metal ion particle generator and the substrate in a vacuum chamber. CONSTITUTION:A metal 2 in an evaporator 1 in vacuum chamber is evaporated by electron beam 18 generated from source 4 by use of supply 6 and a positive voltage ionization electrode 5. The evaporated metal particles 19 are activated by a thermal filament 7, passed through the hole 10 of a barrier plate 9 and an ion selector 11 utilizing magnetic diflection, enter a mask 12, strongly impinge on a substrate 13 being deposited with is maintained at a negative potential, and form a high strength coating layer on the substrate. Because the mass of metal particles determine the amount of deflection in the selector 11, only desirable mass of ionized particles can be deposited on the substrate in efficient manner. As a result, very high purity coating layer is formed. The equipment is particularly suited to an ionizing vacuum deposition.
申请公布号 JPS55152177(A) 申请公布日期 1980.11.27
申请号 JP19790061100 申请日期 1979.05.17
申请人 SHINKO SEIKI 发明人 KAWASHITA YASUSHI;NAKASONE MASAMI;SAKAI KATSUHIRO
分类号 C23C14/32 主分类号 C23C14/32
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