COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To obtain a composition for forming a film having excellent short-time baking and low dielectric properties and heat resistance as an interlayer dielectric in a semiconductor element or the like. SOLUTION: This composition for forming the film comprises a polymer obtained by carrying out an oxidative polymerization of an aromatic compound containing two or more ethynyl groups in the molecule in the presence of a catalyst.