发明名称 |
Method for diffusing p-type dopants into silicon wafers. |
摘要 |
A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier. |
申请公布号 |
EP0019272(A1) |
申请公布日期 |
1980.11.26 |
申请号 |
EP19800102674 |
申请日期 |
1980.05.14 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CHANG, MIKE FUSHING;KENNEDY, RICHARD WILLIAM;HARTMAN, DAVID KAST;ROESCH, ALFRED, (N.M.N.);ASSALIT, HENRI BERNARD |
分类号 |
C30B31/06;H01L21/22;H01L21/223 |
主分类号 |
C30B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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