| 摘要 |
<p>A memory device operable at high speed is disclosed. The device comprises selection means (WD) coupled to word lines (WL) for selecting one of them, detection means (WDT) for detecting a signal appearing in the selected word line, and word line drive means (WDR) responsive to an output of the detection means for supplying the selected word line with a voltage capable of introducing a selection level in it independent on the selection means.</p> |
