Method of forming a short-channel field-effect transistor and field-effect transistor made by that method.

摘要

A field effect transistor (FET) with a very small effective channel length is made by using a first ion implantation to produce the source (18) and drain (19) regions of the FET and a second very shallow ion implantation (22) next to the source region (18) to produce the effective short channel of the FET. The effective channel of the FET is implanted to only a small fraction of the depth of the source and drain. This permits superior control over the threshold voltage of the FET and increases the operating speed of the FET.