发明名称 RADIATION SENSITIVE MATERIAL AND FILM FORMING METHOD
摘要 PURPOSE:To obtain a positive type resist material having high sensitivity, superior heat resistance and superior etching resistance by copolymerizing methyl methacrylate and t-butyl methacrylate. CONSTITUTION:Methyl methacrylate and t-butyl methacrylate are copolymerized to form a copolymer contg. about 5-50mol% t-butyl methacrylate units and having a wt. average mol. wt. of 100,000-several millions, a dispersion degree of about 4 or less and a glass transition point of about 100 deg.C or below. When this copolymer is used as a resist material, it is dissolved in a low-viscosity volatile org. solvent such as toluene or trichloroethylene, and the resulting soln. is coated onto a body and heat treated at about 200-270 deg.C to form a film.
申请公布号 JPS55151637(A) 申请公布日期 1980.11.26
申请号 JP19790059848 申请日期 1979.05.15
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 SAEKI HIDEO
分类号 G03F7/004;C08F20/00;C08F20/10;C08F220/18;G03C1/72;G03C5/00;G03F7/039;G03F7/38;H01L21/027;H01L21/30 主分类号 G03F7/004
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