| 摘要 |
PURPOSE:To improve the mass productivity and the working accuracy of a fine pattern of thin metallic film by ion etching in advance a resist layer on the metallic film as an etching mask when forming the pattern of the film and then wet etching it. CONSTITUTION:When forming a fine pattern of chromium on a glass substrate 1, a chromium layer 2 having a thickness of approx. 800Angstrom -900Angstrom is coated on the substrate 1, and the resist layer 3 is coated thereon. Then, conducting exposure and development, and an etching opening 4 is formed at the resist layer 3. Thereafter, Ar ion is irradiated to etch the layer 2 in the opening 4 formed with the layer 3 in the depth of approx. 200Angstrom , and subsequently wet etched. Finally, ion etched again to complete the etching process. In this manner, it can provide mass productivity as the feature of the wet etching and high working accuracy as the feature of ion etching process. |
