发明名称 |
METHOD OF FORMING CONDUCTIVE TRACKS ON A SEMICONDUCTOR DEVICE |
摘要 |
<p>A method of manufacturing crossing wirings for L.S.I. After providing the lowermost conductor pattern, an intermediate layer of metal is provided over the whole surface. A second conductor pattern is then formed on the intermediate layer, after which the intermediate layer is removed selectively by underetching except at the area of connections between the two conductor levels. - -</p> |
申请公布号 |
CA1090477(A) |
申请公布日期 |
1980.11.25 |
申请号 |
CA19770284097 |
申请日期 |
1977.08.04 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
TE VELDE, TIES S.;WOLTERS, DONALD R. |
分类号 |
H01L23/522;H01L21/283;H01L21/306;H01L21/768;H01L23/482;(IPC1-7):05K3/02 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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