| 摘要 |
PURPOSE:To enable stable single lateral mode oscillation by a stripe type double hetero junction semiconductor over wide operation current by utilizing light absorption by a semiconductor substrate and realizing low threshold current value and high external infinitesimal quantum efficiency. CONSTITUTION:A groove 100 is scribed on an n-type GaAs substrate 10. Then, an n-type Al0.3Ga0.7As layer 11 an undoped Al0.08GA0.92As active layer 12 and a p- type Al0.3Ga0.7As layer 13 are sequentially grown on an n-type GaAs substrate 10. Subsequently, Zn is diffused to form Zn diffused region 15. Thereafter, a p-type ohmic contact 17 and an n-type ohmic contact 18 are formed thereon. |
