| 摘要 |
PURPOSE:To suppress strain of a semiconductor laser element caused by its deterioration by employing a substrate crystal thick as a growing substrate and forming a cleavage groove on the crystal growing surface or opposite surface side of the substrate crystal. CONSTITUTION:The first layer (weir layer) nGa0.65Al0.35As 11, the second layer (active layer) n-GaAs 12, the third layer (weir layer) p-Ga0.65Al0.35As 13 and the fourth layer p-GaAs 14 are sequentially grown on a GaAs substrate 10 to accumulate Al2O3 film 15 obtained thereby, and a stripe 16 of the width of 5-10mum is etched to form an energizing region in the Al2O3 film 15, Zn is diffused in vapor phase to the strip 16 to obtain a low resistance layer 17, and the substrate GaAs is reduced in thickess, and an AuCr/Au layer 18 as p-type side electrode and an Au-Ge/Ni/Au/ Al layer 19 as n-type electrode are vacuum evaporated and alloyed to reduce the thickness of the substrate GaAs. |
