| 摘要 |
PURPOSE:To easily a metallic layer without disconnection such as electrode wire or the like by forming an insulating film patterned on a semiconductor substrate and selectively accumulating the metallic vapor ionized on the surface of the substrate exposed in special energy state. CONSTITUTION:In case of MOS-IC, there are formed, for example, a field oxide film 12, a gate oxide film 13, a silicon gate electrode 14 on an n-type silicon substrate 11, and a p-type source 15 and a drain 16 are formed thereon, and a CVD- SiO2 film 18 is formed on the surface to open the contact holes 191-193. Then, ionized aluminum vapor is accelerated, for example, at 100eV such as, for example, 50eV, and an SiO2 film 18 is introduced. When an Si substrate is disposed at negative potential, an aluminum 20 is selectively accumulated on the silicon substrate exposed at the contact hole by the electrostatic attracting force. Thus, no step is formed on the surface of the substrate, and the wire formed thereon is formed to be flat to eliminate the disconnection. |
