| 摘要 |
PURPOSE:To alleviate the concentration of an electric field, to prevent the improper insulation of a semiconductor device and to raise the withstand breakdown boltage by forming a multilayer wiring in a polycrystalline semiconductor on a semiconductor substrate, and forming an eaves-like projection at the corner of a insulating layer of lower and upper polycrystalline semiconductor wire at an interval. CONSTITUTION:The insulating film C between the upper and the lower layers is introduced into the upper layer polycrystalline silicone wire B to provide an eaves- like projection R in the portion of a corner Q at the intersecting laminate layer between the lower layer polycrystalline silicon wire A and the upper layer polycrystalline silicon wire B. Thus, the isolating distance between the lower layer wire and the upper layer wire at the corner is increased to alleviate the concentration of an electric field due to the thin insulating layer and the stepwise shape so as to enhance the insulating breakdown withstand voltage. This can be applied to a one transistor type dynamic RAM cell utilizing the wire of two layer structure having the polycrystalline silicons. |
