| 摘要 |
PURPOSE:To enable high speed operation of an insulated gate transistor by forming the same conducting type layer as a thin layer with less impurity density on one main surface of a low resistance substrate and forming source, drain regions and a gate electrode on the surface thereof. CONSTITUTION:A relatively low density impurity region 12 is epitaxially grown on a relatively high density impurity region 11. Source and drain regions 13 and 14 are formed on the surface thereof, and source and drain electrodes 13', 14' are connected to the regions 13 and 14, respectively. Further, a gate electrode 15 is formed between the regions 13 and 14 on an insulating layer 16. |
