| 发明名称 |
Semiconductor apparatus |
| 摘要 |
A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.
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| 申请公布号 |
US4235011(A) |
申请公布日期 |
1980.11.25 |
| 申请号 |
US19790024839 |
申请日期 |
1979.03.28 |
| 申请人 |
HONEYWELL INC |
发明人 |
BUTLER, DOUGLAS B;HENDRICKSON, THOMAS E;KOELSCH, RONALD G |
| 分类号 |
H01L21/033;H01L21/28;H01L21/336;H01L21/768;H01L21/8234;H01L27/115;H01L29/78;H01L29/788;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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