| 摘要 |
PURPOSE:To isolate the adsorbed gas to hydrogen-containing amorphous semiconductor film and to form high quality semiconductor film with preferable reproducibility by irradiating heat ray from a heat ray generator in a plasma genertor when forming the film in the plasma. CONSTITUTION:There are disposed the plasma generator 101 having, for example, an anode 107 and a cathode 104 as plasma generating means and the heat ray generator 105 such as an infrared ray lamp in the container. Before generating the plasma, the respective portions of the container are heated by irradiating heat ray to become predetermined temperature in the container. Thus, the adsorbed gas in the respective portions is exhausted to be evacuated. Therefore, the container is cleaned in the interior to form stable semiconductor film with uniform quality. For example, a hydrogen-containing amorphous silicon film can be formed by using SiH4. On the other hand, the heat ray irradiating unit can vary the irradiating angle to enable irradiation of heat ray to the respective portions. When the metallic oxide or nitride is coated on the inner wall of the container, the container can be further cleared. |
