| 摘要 |
PURPOSE:To easily contain semiconductor wafer to be heat treated by arranging a plurality of supporting plates at equal interval on a wafer supporting body having an internal cavity and forming a gas diffuser for introducing gas into the cavity between the supports. CONSTITUTION:A cavity 11 is formed internally in the wafer supporting body 10 of quartz or heat resistant material, and connected to a gas supply source through a gas inlet 12 at one end thereof. A number of supporting plates 13 opposed with each other at equal interval are arranged at predetermined oblique angle on the body. A pair of gas diffusers 14 are formed in connection to the cavity at both ends between the respective plates. There may also be provided the gas diffuser 16 for preventing the introduction of external gas to the inlet side of the body 10. Since the semiconductor wafer 1 can be supported between the supporting plates via gas such as N2 gas from the diffuser, the wafer may be easily loaded and unloaded due to the heat treatment without any stress nor damage thereto. |
