| 摘要 |
An etch that provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma is provided. An extremely high reverse RIE lag is achieved, wherein the etching of small high-aspect ratio openings is possible, but that of large openings is not. A high-density plasma is generated so that carbon monoxide (CO) is ionized to CO+ so that at least 1 sccm equivalent of CO+ is provided. Excited CO neutrals (CO*) are also present within the plasma. Fluorocarbon and hydrofluorocarbon gases are also provided. The excited CO neutrals scavenge free fluorine, near the wafer surface and in the large openings, increasing polymer deposition on the photoresist and in the large openings thus reduce or stop etching in those regions. Concurrently, CO+ is not hindered by diffusion limitation and is readily accelerated deep into the small openings by an applied electric potential; hence, providing oxygen atoms near the bottom of the small openings which help to remove polymer at the etch front and eliminates the propensity for etch stop.
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