| 摘要 |
PURPOSE:To form a shallow pn-junction with polycrystalline film as an insulating film simultaneously upon formation of impurity region on the substrate at the opening by forming the film having the opening on the semiconductor substrate, introducing the impurity through the polycrystalline semiconductor layer. CONSTITUTION:An oxide film 12 of approx. 0.7mu is grown on a p-type semiconductor substrate 11, and openings are perforated at the source and drain forming portions, respectively in case of, for example, a MOS transistor at the predetermined portions. Then, polycrystalline semiconductor layer 13 such as polysilicon is coated in 0.3-0.5mu on the entire surface, and phosphorus is doped. The phosphorus glass formed on the surface is removed, the drive-in treatment is executed at low temperature such as 800-900 deg.C, and shallow n-type regions 14, 15 of approx. 0.5mu doped with phosphorus are formed on the surface of the substrate at the openings. At this time the polysilicon is oxidized to form an oxide film. Thus, it can improve the integrity and high operating speed due to the reduction of parasitic capacity thereof. |
