Semiconductor light emitting device and method for producing the same

摘要

A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 mum or less.