发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Disclosed is a semiconductor device comprising a first transistor and a second transistor formed on a semiconductor substrate, wherein a gate side wall of the second transistor has a thickness equal to that of a gate side wall of the first transistor, wherein each of the first and second transistors has an inner low impurity diffusion region and an outer high impurity diffusion region, and wherein the size of the inner low impurity diffusion region of the second transistor along the surface of the semiconductor substrate is larger than that of the inner low impurity diffusion region of the first transistor.
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申请公布号 |
US6806540(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20010973019 |
申请日期 |
2001.10.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE HIROSHI;NARUKE KIYOMI;MASUDA KAZUNORI |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238;H01L21/8247;H01L27/092;H01L27/10;H01L27/105;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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