| 摘要 |
PURPOSE:To easily alter the characteristics of the respective elements in the same chip by irradiating radiation energy beam to a semiconductor substrate to heat treat the substrate by employing a mask for passing the radiation beam only through the predetermined region of the substrate to enable heat treatment only at the desired region. CONSTITUTION:A semiconductor wafer 7 to be heat treated is supported by a specimen supporting device 8, and a mask 6 made of high melting point Mo, metallic oxide, Si or the like formed in plane at predetermined interval is arranged in opposed manner with the device 8. A radiation beam passing hole 6a of desired shape is formed at the mask 6, and the laser light 2 is passed from the laser body 1 through a sweeping system 5 having an X-axis deflecting mirror 3, a Y-axis deflecting mirror 4 to irradiate the surface of the wafer 7 corresponding to the hole 6a. Thus, only the desired region of the wafer 7 can be heat treated to enable alteration of the transistor characteristics in the same chip from the other element. |
