| 摘要 |
<p>PURPOSE:To reduce the energy difference of band discontinuity generated at a boundary between an active layer and forbidden band widths at both sides and prevent the deterioration of light sensitivity by providing the inclinations of the width reduced toward the active layer side at both sides with the layer. CONSTITUTION:An n-type Al0.4Ga0.6As layer 2, p-type and n-type Al0.15Ga0.85As layers 3, 4 are laminated on an n-type GaAs substrate 1, an n-type AlxGa1-xAs layer (x=1.5 0) 13 is laminated thereon, a GaAs layer 5 is laminated thereon, an n-type AlxGa1-xAs(x=0 1.5) layer 14 is laminated on the layer 5, n-type and p-type Al0.15Ga0.85As layers 6, 7 and a p-type GaAs layer 8 are laminated on the layer 14. Then, the inclinations with width reduced toward the layer 5 on both sides of the layer. Then, when positive and negative voltages are applied to the layers 8, 1 to be enhanced, a depleted layer is extended, a high electric field is applied to the layer 5, and carrier generated by the light at this time is reduce in its energy difference due to discontinuity by the layers 13, 14, and not trapped to the layer 5.</p> |
