| 摘要 |
PURPOSE:To form an electrode-silicon substrate contact of a high heat-resisting propperty when electrically contacting a silicon substrate and a metalelectrode by using a metal-silicon double-layer film. CONSTITUTION:A small hole 3 is provided on the oxidized film 2 formed on a silicon substrate 1, and then a silicon film 4 and a metal film 5 are piled up. Next, the metal film 5 above the small hole 3 is removed, and impurities are added to the substrate 1 through the silicon film 4 by an ion injection, thereby forming an impurities-annexed region 7. At this time, impurities are also added to the silicon film 4, and a reliable electrical contact can be obtained. Hence, as the metal electrode 5 does not come in contact with the silicon substrate 1 directly, there arises no deterioration in the electrode-substrate contact caused by a heat-treatment. This electrode structure can be applied to the lead out section of a gate electrode and it has a wide range of application. |
