| 摘要 |
PURPOSE:To form a plurality of light emitting units on the same substrate by forming an epitaxial layer on a gallium arsenide or gallium phosphide substrate, removing partially the epitaxial layer and forming a conducting type layer. CONSTITUTION:One conducting type epitaxial layer 2 of the same type as a gallium arsenide or gallium phosphide substrate 1 is formed on the substrate 1 by a vapor phase growing process, and a plurality of gallium arsenide phosphide epitaxial layers 3, 4 having different composition ratio of the arsenic and phosphorus are laminated on the layer 2 by a vapor phase growing process. Then, the laminated epitaxial layers 3, 4 are partially removed, and other conducting type layers 7, 6 are formed on the exposed layers 2, 4 to form a plurality of light emitting units. |
