| 摘要 |
<p>PURPOSE:To make a pattern of a high productivity and a high accuracy of interpattern positioning by developing the unevenly exposed areas with varied developing times and varied developing solutions as well. CONSTITUTION:A titanium 42 is sputtered on a silicon substrate 41 to be used for an X-ray mask and a positive-type resist 44 is coated thereon. Then it is exposed to an electron beam as follows: a 5X10<-6>C/cm<2> exposure to the A area and a 6X10<-7>C/cm<2> exposure to the B area. They are developed with isopropyl alcohol and an opening 45 is provided on the A area. After gold 46 is electrodeposited on it, an opening 47 is formed on the B area by developing with a mixed solution of isopropyl alcohol and methyl isobutyl ketone at the ratio of 150 to 1, and gold 48 is electrodeposited thereon. The resist 44 is exfoliated and a back etching is given to the substrate 41 allowing X-rays to pass through. Thus, by utilizing also the difference in sensitivity of the resist resulting from different ingredients of the developing solutions, the accuracy of the pattern can be increased.</p> |
