| 摘要 |
PURPOSE:To arbitrarily realize the control of a shallow junction depth of a semiconductor device by forming source and drain layer portions having shallow junction depths independently from source and drain layer portions having deep junction depths. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are sequentially formed on a p-type silicon substrate 1, a Mo film is, for example, then formed on the entire surface and patterned to form a Mo film mask 8 thereon. Then, phosphorus is, for example, implanted thereto to form source and drain layer 9 portion having deep junction depths. With the mask 8 as a mask the film 3 not coated with the mask 8 is etched to partially expose the layer 9. Thereafter, the mask 8 is removed, the Mo film is formed on the entire surface, the Mo film is then left on the center portion of the film 3 patterned already and on the layer 9 to form a Mo gate electrode 10 and a Mo metallic wire 11. Then, arsenic is implanted with the electrode 10 and the wire 11 as mask, and source and drain layer portion having shallow junction depths are formed to be connected to the layer 9. |
