| 摘要 |
PURPOSE:To prevent the deterioration of a substrate in improving the sensitivity of a positive-type radiation-responsive resist with a crosslinking property by giving it a crosslinked structure, by radiating ultraviolet rays simultaneously with a heat- treatment, thereby carrying out the crosslinking reaction at a low temperature. CONSTITUTION:After applying about 1mum thick positive-type radiation-responsive resist material with a crosslinking property, such as polymethacrylic acid or poly-n- butyl methacrylate, on a masking substrate with chrome film coated on the surface of a transparent glass substrate consisting of soda lime etc., a resist film having a crosslinked structure is formed, by giving a heat-treatment at 160 deg. for 60 minutes while radiating ultraviolet rays of 200-300nm wavelength on the other hand. This resist film is used for the exposure of an electron beam, an X-ray or the like. According to the above method, as the heat-treatment is performed at a low temperature, the diffusion of sodium in the glass substrate can be suppressed and a resist film having no pinholes can be obtained. |
