CRYSTALLIZATION METHOD OF AMORPHOUS SILICON FOR FORMING LARGE GRAIN

摘要

A crystallization method is provided to form a large grain by delaying a crystallization speed of amorphous silicon using a unit pulse layer. A predetermined layer structure is formed on a substrate(100). The predetermined layer structure is composed of a first amorphous silicon layer(300), an insulating layer(400) and a second amorphous silicon layer(500). A crystallization process is performed on the second amorphous silicon layer by irradiating a laser beam on the predetermined layer structure. The insulating layer is made of a silicon oxide layer. The laser beam is a unit pulse layer beam. A metal film made of a tungsten alloy is capable of being interposed between the substrate and the first amorphous silicon layer.