| 摘要 |
PURPOSE: To surely protect a transistor connected with the pad of an integrated circuit, by a method wherein, in at least a part of the edge part of a magnified region, a preferably minimum width slender region is formed isolating the minimum distance and in contact with the surface of a mutual connection track connected with a circuit ground point. CONSTITUTION: A magnified region (e) is formed by ion implantation in the substrate (s) of an MOS integrated circuit or ordinary doping technique such as solid or vapor phase diffusion. The surface form of the magnified region (e) is identical to that of a pad (p) and square. The central part of the magnified region (e) retaining the pad (p) is larger than the pad region. Low resistance contact with the pad region is achieved, e.g. by many small contact regions arranged along the periphery of the pad (p). A slender region (z) has the same conductivity type and resistivity as the magnified region (e). The region (z) stretches in parallel to the three lateral edges of the magnified region (e), so that an enclosure of about 270 deg. can be obtained. The low resistance contact passes the mutual connection track (b), stretches all over the whole length, and is formed on the surface of the slender region (z) and connected with a circuit ground point. |
