| 摘要 |
PURPOSE:To improve both withstand degrees of switching and dv/dt by providing a region, the resistance of which is partially greater than that of other parts, between the auxiliary gate electrode and the cathode opposite to said electrode and by shorting an exposed junction end of the region of higher resistance with the cathode. CONSTITUTION:The n-type base layer nB, p-type base layer PB and n-type emitter layer nE that is in the layer pB are formed on the p-type emitter layer PE to obtain a semiconductor substrate 1. In this composition, the auxiliary emitter layer 6 surrounds more than half of the circumference of the nE layer, the gate electrode 4 is mounted on the outside of the emitter layer 6. Also the auxiliary gate electrode 5 is provided inside of the gate electrode, ''on'' regions 7, 8 and ''off'' regions 9, 10 are formed inside said elements. In such a thyristor, the partial n-type embedded layers 11, 12 are formed below the auxiliary gate electrode 5 to produce a partial high resistance region in the pB layer between the electrode 5 and the nE layer. Moreover, the pn-junction that is opposite to the high resistance region and is exposed on the surface of the main emitter is shorted with the cathode 3. |
