| 摘要 |
PURPOSE:to increase the degree of integration and to make a special selection of a a cell by connecting memory cells on both sides of a word line to the word line and then by providing four bit lines connecting with a group of transistors selecting four bit lines at a time and that selecting two bit lines. CONSTITUTION:A couple of memory cells MC11 and MC21 are connected to one word line. The other memory cells are the same. Here, TW1 is a driver for word line W01. Then, TB1-TB4 are transistors for selecting bit lines and conduct when bit-line group selective signal AyO applied to bases are held at level ''H''. Next, TR1-TR4 selects two among four bit lines to control the write and read of memory cells. This constitution eliminates the need for an interval between a couple of memory cells, increasing the degree of integration. Further, since four bit lines are grouped in one, memory cells are selected at a time, two by two bits, so that a special memory selection can be carried out. |
