发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To avoid the fluctuation of characteristic of semiconductor device due to temperature difference, the device being of the type having a diode or a transistor as an input element and a transistor as an output element are mounted on a common semiconductor substrate to form a current-mirror circuit, by arranging such that the elements are divided into a plurality of segments and arranged alternately. CONSTITUTION:In forming a current mirror circuit by disposing a transistor Q1 acting as an input diode and transistors Q2 and Q3 of the output side on a common semiconductor substrate, these transistors are arranged such that the input side and the output side are disposed alternatingly at each side of the transistor Q1, i.e. in the order of Q2,Q1,Q3. The emitter resistances R1,R2,R3 connected to respective transistor are also disposed alternately in the same manner. This arrangement permits the cancellation of the temperature differential between the transistor Q1 and Q2 and between Q1 and Q3 even when a temperature gradient is formed in the substrate, so that the fluctuation of current ratio attributable to temperature change is eliminated.
申请公布号 JPS55146955(A) 申请公布日期 1980.11.15
申请号 JP19790053487 申请日期 1979.05.02
申请人 HITACHI LTD 发明人 FURUHATA MAKOTO
分类号 H03F1/30;H01L21/822;H01L27/02;H01L27/04;H03F3/34;H03F3/343;H03F3/347 主分类号 H03F1/30
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