| 摘要 |
PURPOSE:To easily manufacture chemically and mechanically stable multilayered wiring structure by a method and apparatus in which a laminated structure capable of being treated by anode oxidation, e.g., Ta-Al, as the second and underlying layers, and then the laminated structure is oxidated by an anode oxidation process. CONSTITUTION:Windows are formed in an SiO2 film 2 on an Si substrate 1 having a pn-junction, and the SiO2 film is covered by an insulating film to form a wiring layer 3. The insulating film 4 is perforated at predetermined portions thereof and a thin film of a refractory metal such as Ta film 11 is formed on the insulating film 4 by an evaporation. Then, a film of Al is formed by an evaporation. Subsequently, a porous alumina film 8 is formed on the Al film 7. Thereafter, the Al film 7 and the Ta film 11 are selectively anode-oxidated to become an alumina film 8 and a Ta2O5 film 12. According to this arrangement, the wiring material is covered by stable oxides and, therefore, exhibits high mechanical and chemical stability. Because thin Ta film constitutes a passage for the anode oxidation, the oxidation is effected perfectly to avoid short-circuiting due to the presence of unoxidated portion. For the same reason, the generating spike of Al between the first and second layers is prevented to ensure a high reliability of the semiconductor device. |
