| 摘要 |
<p>PURPOSE:To simplify an assembling process by a method wherein a collector electrode made of soldering metal is formed on one of main surface of a semiconductor pellet substrate and base and emitter electrodes made of Al is formed on another main surface and a soldering layer is provided in a part of it placing a metal film suitable for connecting soldering metal between them. CONSTITUTION:A p-type base region and an n<+>-type emitter region are formed by diffusion on an n-type Si substrate and base and emitter electrodes 15, 17 which are made of Al and have enough width through a selective opening on an SiO2 film. And a part of them is selectively covered with a solderable metal layer 20 such as Ni or Cr etc. by evaporation and they are covered with PSG21 and it is perforated and it is soldered by dipping, and thus soldered layers 16, 18, 24 are formed on the metal layer 20. Next thereto a water is divided into pellets and they are welded on a copper plate 5 placing a solder layer 24 between them, and Cu lead wires 6, 7 are connected with electrodes 16, 18. After these process they are finished by sealing with resin. By this constitution a semiconductor device of enough protective property, assembled by simple process and with low cost can be obtained.</p> |
