Oxide semiconductor - has crystalline substrate of gallium arsenide coated with oxide

摘要

Structure of the oxide semiconductor type consists of a crystalline semiconductor substrate of formula AIII-BV coated with a layer of oxide. Specifically, the substrate has a (110) crystalline orientation and the oxide is of formula (AIII-BV)OH. The semiconductor may be GaAs or InP. Used in mfr. of MOS structures, esp. MOSFETs of high performance. The material may also be used in optoelectronics where it permits passivation of the faces of such components as semiconductor lasers.