CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING HAVING THE SAME

摘要

A CMOS image sensor and a method for manufacturing the same are provided to increase yield and quality by improving a lagging effect. A semiconductor substrate(200) includes a transistor element and a photodiode element. A pixel region and a non-pixel region are defined on the semiconductor substrate. An interlayer dielectric(210) is formed on an upper surface of the semiconductor substrate. The interlayer dielectric includes a SiH4 capping layer(212) formed on the pixel region of the semiconductor substrate and a USG layer(214) formed on the non-pixel region of the semiconductor substrate. A metal line(220) is formed on the interlayer dielectric. An insulating layer(230) for protecting elements is formed on the entire surface of the semiconductor substrate.