| 摘要 |
<p>A Si body with zone(s) of one conductivity type limited to one surface is masked against oxidn. with a material other than Si oxide and provided with a no. of surface zones of the second conductivity type, from which the source and drain zones are formed. It is then provided with an oxide pattern sunk into the Si body over (pt. of) its thickness, which extends over the surface zones and has a no. of windows defining the mesa zones. The channel and zone contacts are then formed. The novel features are as follows. Before forming the surface zones, a first strip mask is formed from the masking film, which covers the surface, channel and contact zones and exposes the limiting zones. This used as doping and oxidn. mask. It is then etched selectively to remove pts. extending across the entire width of the strips, giving a second mask which covers the channel and contact zones and, with the first oxide film, forms a third mask with windows over the areas for the surface zones. After doping with an impurity of the second conductivity type, the sunken oxide mask is produced and impurities of the second and first conductivity type are diffused further into the body and the channel zones are formed. The second mask is then removed completely and an insulated gate electrode and surface zone contacts are formed. The process is used in IC mfr. Reproducible structures with very small dimensions and great density can be obtd.</p> |
