| 摘要 |
PURPOSE:To improve detection accuracy, by providing detection signal processing circuits near the bonded parts of a silicon substrate into which signals are introduced and an Si substrate located on the way of signal introduction to a shift register. CONSTITUTION:Lead wires li for picking out signals photoelectrically changed by the elements Di of an infrared detection element group are connected to the bonded parts 8S of a silicon substrate 10. Inverter circuit Ii are inserted in parallel with lines lj for introducing signals from the bonded parts 8S into input diodes 4S. Signals are applied to input gates IGi. The signal introduction lines lj are connected to the input diodes 4S. In that state, a prescribed voltage is applied to a temporary storage gate 6 to temporarily store a signal charge. A prescribed voltage is then applied to an output gate electrode OGi and conducted to an output diode ODi and a shift register 3. A signal applied to the shifter register 3 is conducted in a time series manner to an output side by transfer voltage clock signals phi1, phi2. Accuracy is thus improved. |
